Self-catalysed growth of InAs nanowires on bare Si substrates by droplet epitaxy
Self-catalysed growth of InAs nanowires on bare Si substrates by droplet epitaxy
复制标题
DOI：
10.1002/pssr.201409106
复制
发表时间：
2014-07-01
影响因子：
2.8
通讯作者：
Kolosov, O.
中科院分区：
文献类型：
--
作者：
Anyebe, E. A.;Zhuang, Q.;Kolosov, O.
我们证明了用液滴外延法在裸Si（111）上自催化生长垂直排列的InAs纳米线。确定了适合纳米线成核和生长的铟液滴的生长条件。然后，我们通过最佳的铟滴在裸Si（111）衬底上实现了垂直排列和非锥形的InAs纳米线。研究发现，纳米线的横向尺寸和密度是由铟滴决定的。该技术揭示了一种可控、经济、省时的方法，可以在硅上制造功能单一的InAs纳米线杂化结构。(C) 2014 WILEY-VCH Verlag GmbH & Co., KGaA, Weinheim
We demonstrate the self-catalyst growth of vertically aligned InAs nanowires on bare Si(111) by droplet epitaxy. The growth conditions of indium droplets suitable for nucleation and growth of nanowires have been identified. We have then realized vertically aligned and non-tapered InAs nanowires on bare Si(111) substrates through optimal indium droplets. It was found that the lateral dimensions and density of nanowires are defined by the indium droplets. This technique unravels a controllable, cost-effective and time-efficient route to fabricating functional monolithic hybrid structures of InAs nanowires on silicon. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim