Highly conductive GaAsNSe alloys grown on GaAs and their nonalloyed ohmic properties
Highly conductive GaAsNSe alloys grown on GaAs and their nonalloyed ohmic properties
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GaAs 上生长的高导电 GaAsNSe 合金及其非合金欧姆特性
DOI：
10.1063/1.1418449
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发表时间：
2001
影响因子：
4
通讯作者：
I. Suemune
中科院分区：
文献类型：
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作者：
K. Uesugi;I. Suemune
研究了用金属有机分子束外延技术在GaAs（001）衬底上生长的GaAsN合金中Se的掺杂特性。使用二叔丁基硒化物（DtBSe）前体作为Se源。结果发现，硒被纳入GaAs和GaAsN层高达一个相当大的浓度为15%。还表明，氮浓度的GaAsNSe层的DtBSe供应增加。GaAsNSe层是重掺杂的n型，最大电子浓度高达1020 ×1020 cm−3。 随着载流子浓度的增加，GaAsNSe的电阻率急剧下降到1.2×10−4 Ω cm。 这使得有可能在没有热退火的情况下具有欧姆接触，这表明GaAsNSe合金是用于形成非合金欧姆接触的有吸引力的候选者。
Doping properties of Se in GaAsN alloys grown on GaAs (001) substrates by metalorganic-molecular-beam epitaxy were studied. Ditertiarybutylselenide (DtBSe) precursor was used as a Se source. It was found that Se was incorporated into GaAs and GaAsN layers up to a considerable concentration of ∼15%. It was also suggested that the N concentrations in GaAsNSe layers were increased by the DtBSe supply. The GaAsNSe layers were heavily doped n type, and the maximum electron concentration was as high as ∼1×1020 cm−3. With the increase of the carrier concentrations, the resistivity of GaAsNSe dramatically decreased to 1.2×10−4 Ω cm. This made it possible to have ohmic contacts without thermal annealing, which indicates that GaAsNSe alloys are an attractive candidate for the formation of nonalloyed ohmic contacts.
DOI：
10.1143/jjap.35.1273
发表时间：
1996-02-01
期刊：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
影响因子：
--
作者：
Kondow, M;Uomi, K;Yazawa, Y
通讯作者：
Yazawa, Y