Insertion of Zn atoms into Cu3N lattice: Structural distortion and modification of electronic properties
Insertion of Zn atoms into Cu3N lattice: Structural distortion and modification of electronic properties
复制标题
将 Zn 原子插入 Cu3N 晶格：结构畸变和电子性能改变
DOI：
10.1016/j.jcrysgro.2011.02.030
复制
发表时间：
2011-04-15
影响因子：
1.8
通讯作者：
Cao, Z. X.
中科院分区：
文献类型：
--
作者：
Gao, L.;Ji, A. L.;Cao, Z. X.
采用反应磁控溅射金属靶的方法制备了Cu3NZnx纳米晶化合物薄膜。当锌含量达到5.44at.%时，薄膜表现出令人满意的结晶度，X射线衍射图显示出明显的本征Cu3N晶格的(001)和(002)反射特征。晶格常数略有增大，表明锌原子插入原始Cu3N晶格的晶胞中心。所有的三元沉积都表现出n型电导。当锌浓度从0增加到5.44at.%时，样品的室温电阻率下降了三个数量级，电导激活能从21.9 meV下降到14.1 meV，表明掺杂样品中存在浅施主能级。在低掺杂样品中，电子输运是由热激活控制的，而在锌浓度为5.44at.%或更高的样品中，在低温(<；50K)下，电子输运是由跳跃机制主导的。(C)2011爱思唯尔B.V.保留所有权利。
Nanocrystalline Cu3NZnx compound films were synthesized using reactive magnetron sputtering of metal targets. Up to a Zn content of 5.44 at.%, the deposits exhibit a satisfactory crystallinity that the X-ray diffraction patterns show distinct (0 0 1) and (0 0 2) reflections characteristic of the intrinsic Cu3N lattice. The slightly enlarged lattice constant suggests insertion of zinc atoms to the center of cells of primitive Cu3N lattice. All the ternary deposits exhibit an n-typed conductivity. Electrical resistivity at room temperature drops by three orders of magnitude with increasing zinc concentration from 0 to 5.44 at.%, and accordingly the activation energy for electrical conduction decreases from 21.9 to 14.1 meV, indicating the presence of shallow donor levels in doped samples. The electronic transport is governed by thermal activation in lightly doped samples, whereas in samples with a zinc concentration of 5.44 at.% or higher it is instead dominated by a hopping mechanism at low temperatures ( < 50 K). (C) 2011 Elsevier B.V. All rights reserved.