An integrated circuit design of a silicon neuron and its measurement results
An integrated circuit design of a silicon neuron and its measurement results
复制标题
DOI：
10.1007/s10015-008-0530-8
复制
发表时间：
2008-12
影响因子：
0.9
通讯作者：
M. Sekikawa;T. Kohno;K. Aihara
中科院分区：
文献类型：
--
作者：
M. Sekikawa;T. Kohno;K. Aihara
本文介绍了一种新的基于MEMS的硅神经膜模型及其测量结果。该模型是基于相平面分析和分叉理论的数学结构设计的。该电路采用MOSISTSMC0.35 μ mCMOS工艺实现。测量结果表明，我们的电路显示出可兴奋细胞的基本能力，例如a）静息状态，B）动作电位，c）阈值，和d）不应性。
A novel MOSFET-based silicon nerve membrane model and its measurement results are described in this paper. This model is designed based on a mathematical structure that is characterized by phase plane analysis and bifurcation theory. The circuit is fabricated through MOSIS TSMC 0.35 μm CMOS process. Measurement results demonstrate that our circuit shows fundamental abilities of excitable cells such as a) a resting state, b) an action potential, c) a threshold, and d) a refractoriness.