MEMORY WINDOW OF PT/SRBI2TA2O9/CEO2/SIO2/SI STRUCTURE FOR METAL FERROELECTRIC INSULATOR SEMICONDUCTOR FIELD EFFECT TRANSISTOR
MEMORY WINDOW OF PT/SRBI2TA2O9/CEO2/SIO2/SI STRUCTURE FOR METAL FERROELECTRIC INSULATOR SEMICONDUCTOR FIELD EFFECT TRANSISTOR
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DOI：
10.1063/1.120374
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发表时间：
1997-12
影响因子：
4
通讯作者：
Y. Kim;D. Shin
中科院分区：
文献类型：
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作者：
Y. Kim;D. Shin
提出了一种用于金属铁电绝缘体铁电栅场效应晶体管的Pt/SrBi2Ta2O9/CeO2/SiO_2/Si结构。所提出的铁电栅的存储窗口随着施加在SrBi2Ta2O9层上的电场的增加而增大，并且Pt/SrBi2Ta2O9/CeO2/SiO_2/Si的存储窗口相对比Pt/SrBi2Ta2O9/SiO_2/Si的大。因此，在4-7V的低栅电压范围内，Pt/SrBi2Ta2O9(140 Nm)/CeO2(25 Nm)/SiO_2/Si结构具有从0.9到2.5V的足够可编程的存储窗口。
We have proposed a Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure for a ferroelectric gate of metal ferroelectric insulator field effect transistor. A memory window of the proposed ferroelectric gate increases as electric field applied to the SrBi2Ta2O9 layer increases, and the memory window of Pt/SrBi2Ta2O9/CeO2/SiO2/Si is relatively greater than that of Pt/SrBi2Ta2O9/SiO2/Si. As a result, the Pt/SrBi2Ta2O9(140 nm)/CeO2(25 nm)/SiO2/Si structure has sufficiently programmable memory windows from 0.9 to 2.5 V in the low gate voltage range of 4–7 V.