Semiconductor Crystal Growth under the Influence of Magnetic Fields
Semiconductor Crystal Growth under the Influence of Magnetic Fields
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DOI：
10.1002/crat.201900115
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发表时间：
2019-10
影响因子：
1.5
通讯作者：
C. Frank-Rotsch;N. Dropka;F. Kiessling;P. Rudolph
中科院分区：
文献类型：
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作者：
C. Frank-Rotsch;N. Dropka;F. Kiessling;P. Rudolph
近年来半导体晶体生长研究的重点是提高工艺效率和提高晶体质量。为了提高晶体质量，精确和永久地控制熔体流动是一个至关重要的参数。为了获得更大的晶体，熔体体积必须显著增加，从而导致不利的熔体对流改变。在查克拉尔斯基生长的情况下，流动甚至可以变成湍流。这种变化的流动会干扰单晶的生长，并可能导致晶体内掺杂物的不均匀性。为了有效地影响熔体流动，从而改善生长条件，可以施加磁场。稳定磁场（SMF）在工业上主要用于抑制熔体流动振荡。然而，与SMF相比，非SMF的应用也被证明是非常有前途的，因为在熔体中明显较低的感应会产生类似的效果。概述了磁场的特征，重点介绍了在行磁场影响下可实现的结果。
The recent development of semiconductor crystal growth focusses on increase of process efficiency and simultaneous improvement of crystal quality. For improved crystal quality, an exact and permanent control of the melt flow is a crucial parameter. To achieve larger crystals, the melt volume must be increased markedly resulting in disadvantageously changed melt convection. In the case of Czochralski growth, the flow can even become turbulent. This changed flow can disturb the single crystal growth and may give rise to dopant inhomogeneities within the crystal. To effectively influence melt flow and hence to improve growth conditions, magnetic fields can be applied. Mostly, steady magnetic fields (SMF) are applied in industrial scale to damp melt flow oscillations. However, compared to SMF the application of non‐SMF proves to be also very promising since significantly lower induction causes similar effects in the melt. An overview on magnetic field features with the focus on achievable results under the influence of traveling magnetic fields is given.