Aerosol-Assisted Chemical Vapour Deposition of Transparent Zinc Gallate Films
Aerosol-Assisted Chemical Vapour Deposition of Transparent Zinc Gallate Films
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DOI：
10.1002/cplu.201402037
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发表时间：
2014-07-01
期刊：
影响因子：
3.4
通讯作者：
Carmalt, Claire J.
中科院分区：
文献类型：
--
作者：
Knapp, Caroline E.;Manzi, Joe A.;Carmalt, Claire J.
GaMe3、ZnEt2 和供体功能化醇 HOCH2CH2OMe（6 当量）在甲苯中进行气溶胶辅助化学气相沉积 (AACVD) 反应，在一定温度范围（350-550 摄氏度）下沉积非晶透明镓酸锌 (ZnGa2O4) 薄膜。通过扫描电子显微镜、X射线光电子能谱（XPS）、能量色散X射线分析、掠射角X射线粉末衍射（XRD）和光学研究对锌镓氧化物薄膜进行了分析。发现最佳生长温度为 450 摄氏度，可生产出具有良好基材覆盖性的透明薄膜。 XPS 证实了薄膜中存在锌、镓和氧。这些薄膜在1000℃下退火得到结晶薄膜，掠射角粉末X射线衍射表明，采用了晶格参数a=8.336(5)埃的镓酸锌尖晶石骨架。
Aerosol-assisted chemical vapour deposition (AACVD) reactions of GaMe3, ZnEt2 and the donor-functionalised alcohol HOCH2CH2OMe (6 equiv.) in toluene resulted in the deposition of amorphous transparent zinc gallate (ZnGa2O4) films at a range of temperatures (350-550 degrees C). The zinc-gallium oxide films were analyzed by scanning electron microscopy, X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray analysis, glancing-angle X-ray powder diffraction (XRD) and optical studies. The optimum growth temperature was found to be 450 degrees C, which produced transparent films with excellent coverage of the substrate. XPS confirmed the presence of zinc, gallium and oxygen in the films. Annealing these films at 1000 degrees C resulted in crystalline films and glancing-angle powder XRD showed that a zinc gallate spinel framework with a lattice parameter of a=8.336(5) angstrom was adopted.