Giant magnetoresistance in an epitaxial NiMnSb∕Cu∕CoFe multilayer
Giant magnetoresistance in an epitaxial NiMnSb∕Cu∕CoFe multilayer
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DOI：
10.1063/1.1897828
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发表时间：
2005-03
影响因子：
4
通讯作者：
E. Girgis;P. Bach;C. Rüster;C. Gould;G. Schmidt;L. Molenkamp
中科院分区：
文献类型：
--
作者：
E. Girgis;P. Bach;C. Rüster;C. Gould;G. Schmidt;L. Molenkamp
We have fabricated current-in-plane giant magnetoresistive (GMR) devices based on multilayers of epitaxial NiMnSb and sputtered Cu and CoFe. The devices show a magnetoresistance of up to 3.5% at room temperature. The amplitude of the current-in-plane GMR signal and the nature of the coupling between the two magnetic layers depend on the thickness of the Cu layer. For a 1.5nm thick Cu layer, the device exhibits antiferromagnetic coupling, whereas a parallel alignment is observed for 2.2 or 3nm thick Cu layers at low field.
