Single photon counting X-ray imaging with Si and CdTe single chip pixel detectors and multichip pixel modules

Single photon counting X-ray imaging with Si and CdTe single chip pixel detectors and multichip pixel modules
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DOI:
10.1109/tns.2004.832610
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发表时间:
2004-08-01
影响因子:
1.8
通讯作者:
Wermes, N
Wermes, N
中科院分区:
工程技术3区
文献类型:
--
作者:
Löcker, M;Fischer, P;Wermes, N

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多芯片组件(MCM)已经成功地建立和运行。这些使用4个单光子计数MPEC 2.3芯片,这些芯片凸块键合到1.3 cm x 1.3 cm CdTe或Si半导体像素传感器。MPEC 2.3芯片提供高达1 MHz的像素计数速率,具有18位的大动态范围、2个计数器和带连续可调阈值的能量窗口。每个MPEC具有32 × 32像素,像素大小为200 μ m × 200 μ m。对于MCM,4个芯片被布置在2 x 2阵列中,这导致64 x 64传感器像素几何形状。的MCM结构进行了描述,并显示了不同的探测器的成像性能。使用了新开发的USB读出系统。
Multichip modules (MCM) have been successfully built and operated. These use 4 single-photon counting MPEC 2.3 chips that are bump bonded to 1.3 cm x 1.3 cm CdTe or Si semiconductor pixel sensors. Single-chip detectors were built as well.The MPEC 2.3 chip provides a pixel count rate up to 1 MHz with a large dynamic range of 18 bits, 2 counters and energy windowing with continuously adjustable thresholds. Each MPEC has 32 x 32 pixels of 200 mum x 200 mum pixel size. For a MCM the 4 chips are arranged in a 2 x 2 array which leads to a 64 x 64 sensor pixel geometry. The MCM construction is described, and the imaging performance of the different detectors is shown. A newly developed USB readout system has been used.