New operation scenarios for severely irradiated silicon detectors
New operation scenarios for severely irradiated silicon detectors
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DOI：
10.22323/1.095.0008
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发表时间：
2010-08
期刊：
影响因子：
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通讯作者：
G. Casse;A. Affolder;P. Allport;H. Brown;C. Wiglesworth
中科院分区：
文献类型：
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作者：
G. Casse;A. Affolder;P. Allport;H. Brown;C. Wiglesworth
最近在严重强子辐照后的电荷收集测量证明，在欧洲核子研究中心未来的超大型强子对撞机(SLHC)中，n侧读出分段平面硅探测器可以成功地工作到升级实验最内层预期的剂量。被辐照的传感器收集的电荷足以保证信噪比(S/N)高于10，即使对于位于与光束线的最小径向距离(小于4 cm)的像素层也是如此。信号取决于施加的偏压，可能需要高达1000V的电压才能满足曝光最多的探测器的最小信号高度。SLHC中像素层剂量的辐射也会导致反向电流的显著增加，高偏置电压和反向电流会导致显着的功率消耗，需要施加足够的冷却来将电流限制在远低于热失控的水平。
Recent charge collection measurements after severe hadron irradiation have proved that n-side readout segmented planar silicon detectors can successfully operate up to the doses anticipated for the innermost layers of the upgraded experiments in the future super LHC (sLHC) at CERN. The charge collected by the irradiated sensors is sufficient to guarantee a signal over noise (S/N) ratio above 10 even for the pixel layers located at the smallest radial distance from the beam line (less than 4 cm away). The signal depends on the applied bias and voltages as high as 1000V could be required to satisfy the minimum signal height for the most exposed detectors. The radiation at the doses of the pixel layers in the sLHC also cause an important increase of the reverse current The high bias voltages and reverse currents cause significant power dissipation and adequate cooling needs to be applied to limit the current well below the thermal-runaway level.