PARABOLIC MAGNETORESISTANCE FROM THE INTERACTION EFFECT IN A TWO-DIMENSIONAL ELECTRON-GAS
PARABOLIC MAGNETORESISTANCE FROM THE INTERACTION EFFECT IN A TWO-DIMENSIONAL ELECTRON-GAS
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DOI：
10.1103/physrevlett.51.2226
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发表时间：
1983-01-01
影响因子：
8.6
通讯作者：
HWANG, JCM
中科院分区：
文献类型：
--
作者：
PAALANEN, MA;TSUI, DC;HWANG, JCM
在GaAsAlxGa1−xAs异质结的二维电子气中发现了与B2成正比的负磁电阻。这可以用无序二维体系中电子相互作用效应引起的电导修正来解释。由相互作用效应和Shubnikov-de Haas振荡估计的高场电子寿命比零场寿命短得多，表明在高迁移率的GaAsAlxGa1−xAs样品中，长程势能涨落占主导地位。
A negative magnetoresistance proportional to B 2 is found in the two-dimensional electron gas of GaAs-Al x Ga 1− x As heterostructures. It is explained by the conductivity correction due to the electron interaction effect in disordered two-dimensional systems. The high-field electron lifetime, estimated both from the interaction effect and from the Shubnikov-de Haas oscillations, is much shorter than the zero-field lifetime, demonstrating the predominance of long-range potential fluctuations in high-mobility GaAs-Al x Ga 1− x As samples.