Surface Microroughness Observed during Wet Etching of Silicon Dioxide with High Electric Field Stress
Surface Microroughness Observed during Wet Etching of Silicon Dioxide with High Electric Field Stress
复制标题
高电场应力湿法刻蚀二氧化硅时观察表面微观粗糙度
DOI：
10.1143/jjap.38.l1453
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发表时间：
1999
影响因子：
1.5
通讯作者：
M. Murata
中科院分区：
文献类型：
--
作者：
K. Yamabe;L. Kai;M. Murata
利用原子力显微镜（AFM）观察了高电场应力下分步湿法刻蚀二氧化硅过程中的表面粗糙度。结果发现，上述氧化物表面的均方根值随电场应力的增加而增加。这表明，由高电场应力引起的二氧化硅内部损伤是二维分布的，并且劣化不均匀地进行。在二氧化硅的分步蚀刻过程中也获得了均方根值的深度分布，这可以反映由高电场应力引起的二氧化硅中的内部损伤的深度分布。
Surface microroughness during stepwise wet etching of silicon dioxide with high electric field stress was observed by atomic force microscopy (AFM). It was found that the rms (root mean square) value of the above oxide surface increased with increasing electric field stress. This indicates that the internal damage in silicon dioxide caused by the high electric field stress is distributed two-dimensionally and the degradation does not progress uniformly. The depth profile of the rms value was also obtained during stepwise etching of the silicon dioxide, which may reflect the depth profile of the internal damage in the silicon dioxide caused by the high electric field stress.