Effects of hydrogenation on thermal conductivity of ultrananocrystalline diamond/amorphous carbon composite films prepared via coaxial arc plasma deposition
Effects of hydrogenation on thermal conductivity of ultrananocrystalline diamond/amorphous carbon composite films prepared via coaxial arc plasma deposition
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DOI：
10.7567/apex.11.065101
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发表时间：
2018-05
影响因子：
2.3
通讯作者：
S. Takeichi;T. Nishiyama;Mitsuru Tabara;Shuichi Kawawaki;M. Kohno;Koji Takahashi;T. Yoshitake
中科院分区：
文献类型：
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作者：
S. Takeichi;T. Nishiyama;Mitsuru Tabara;Shuichi Kawawaki;M. Kohno;Koji Takahashi;T. Yoshitake
采用同轴电弧等离子体沉积法制备了超纳米晶金刚石（UNCD）/氢化非晶碳（a-C：H）复合薄膜（UNCD/a-C：H）和UNCD/非氢化非晶碳（a-C）复合薄膜（UNCD/a-C），并利用时域热反射法测量了其热导率和晶界界面电导率。UNCD/a-C：H和UNCD/a-C薄膜的界面电导率估计分别为1，010和4，892 MW/（m2·K）。氢化膜具有比非氢化膜低的界面电导的原因是1）有助于热传输的载流子的数量减少和2）氢原子，其优先位于晶界处并增强声子散射。
Ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon (a-C:H) composite (UNCD/a-C:H) and UNCD/non-hydrogenated amorphous carbon (a-C) composite (UNCD/a-C) films were prepared via coaxial arc plasma deposition, and their thermal conductivity and interfacial conductance in grain boundaries were measured using a time-domain thermoreflectance method. The interfacial conductance was estimated to be 1,010 and 4,892 MW/(m2·K) for UNCD/a-C:H and UNCD/a-C films, respectively. The reasons for the hydrogenated film having lower interfacial conductance than the non-hydrogenated film are 1) the reduced number of carriers that contribute to heat transport and 2) the hydrogen atoms, which are preferentially located at the grain boundaries and enhance phonon scattering.