The Optical Spectra of a-Si:H and a-SiC:H Thin Films Measured by the Absolute Photothermal Deflection Spectroscopy (PDS)
The Optical Spectra of a-Si:H and a-SiC:H Thin Films Measured by the Absolute Photothermal Deflection Spectroscopy (PDS)
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采用绝对光热偏转光谱 (PDS) 测量 a-Si:H 和 a-SiC:H 薄膜的光谱
DOI：
10.4028/www.scientific.net/ssp.213.19
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
M. Zeman
中科院分区：
文献类型：
--
作者：
Z. Remeš;R. Vasudevan;K. Jarolimek;A. Smets;M. Zeman
新的绝对 PDS 设置可以同时测量 280 2000 nm 光谱范围内的光学透射率 T、反射率 R 和吸收率 A 光谱的绝对值，紫外和可见光谱范围内的典型光谱分辨率为 10 nm，近红外区域的典型光谱分辨率为 20 nm。 PDS 设置使用无毒液体全氟己烷 Fluorinert FC72 提供高达 4 个数量级的光学吸收率动态检测范围。在这里，我们展示了该装置在一系列本征以及掺杂的 a-Si:H 和 a-SiC:H 薄膜上的可用性，这些薄膜是通过射频 (RF) 等离子体增强化学气相沉积 (CVD) 从氢、硅烷和甲烷在各种条件下沉积在玻璃基板上。观察到 Tauc 能隙随着本征 a-SiC:H 中碳浓度的增加而增加。在乌尔巴赫吸收边以下的掺杂 a-Si:H 和未掺杂 a-SiC:H 中观察到了能隙中缺陷引起的局域态。
The new absolute PDS setup allows to measure simultaneously the absolute values of the optical transmittance T, reflectance R and absorptance A spectra in the spectral range 280 2000 nm with the typical spectral resolution 10 nm in ultraviolet and visible spectral range and 20 nm in the near infrared region. The PDS setup provides the dynamic detection range in the optical absorptance up to 4 orders of magnitude using non-toxic liquid perfluorohexane Fluorinert FC72. Here we demonstrate the usability of this setup on a series of intrinsic as well as doped a-Si:H and a-SiC:H thin films deposited on glass substrates by radio frequency (RF) plasma enhanced chemical vapor deposition (CVD) from hydrogen, silane and methane under various conditions. The increase of the Tauc gap with increasing carbon concentration in intrinsic a-SiC:H was observed. The defect-induced localized states in the energy gap were observed in doped a-Si:H as well as undoped a-SiC:H below the Urbach absorption edge.