Metal-semiconductor-metal photodetectors based on graphene/p-type silicon Schottky junctions
Metal-semiconductor-metal photodetectors based on graphene/p-type silicon Schottky junctions
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DOI：
10.1063/1.4773992
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发表时间：
2013-01-07
影响因子：
4
通讯作者：
Ural, Ant
中科院分区：
文献类型：
--
作者：
An, Yanbin;Behnam, Ashkan;Ural, Ant
基于石墨烯/p型硅肖特基结的金属-半导体-金属（MSM）光电探测器的制造和表征。热电子发射在 260 K 以上的结点传输中占主导地位，零偏压势垒高度为 0.48 eV。发现势垒高度的反向偏压依赖性主要是由石墨烯中的费米能级偏移引起的。 MSM光电探测器表现出0.11 A/W的响应度和4.55 x 10(4) mW(-1)的归一化光电流与暗电流比，这比之前基于碳纳米管的类似探测器获得的要大。这些结果对于将透明导电石墨烯电极集成到现有的硅技术中非常重要。 (C) 2013 年美国物理研究所。 [http://dx.doi.org/10.1063/1.4773992]
Metal-semiconductor-metal (MSM) photodetectors based on graphene/p-type Si Schottky junctions are fabricated and characterized. Thermionic emission dominates the transport across the junctions above 260 K with a zero-bias barrier height of 0.48 eV. The reverse-bias dependence of the barrier height is found to result mostly from the Fermi level shift in graphene. MSM photodetectors exhibit a responsivity of 0.11 A/W and a normalized photocurrent-to-dark current ratio of 4.55 x 10(4) mW(-1), which are larger than those previously obtained for similar detectors based on carbon nanotubes. These results are important for the integration of transparent, conductive graphene electrodes into existing silicon technologies. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773992]