Current induced drift mechanism in amorphous SiNx:H thin film diodes
Current induced drift mechanism in amorphous SiNx:H thin film diodes
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DOI：
10.1063/1.112482
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发表时间：
1994-12
影响因子：
4
通讯作者：
J. Shannon;S. Deane;B. McGarvey;J. N. Sandoe
中科院分区：
文献类型：
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作者：
J. Shannon;S. Deane;B. McGarvey;J. N. Sandoe
结果表明，富硅非晶氮化硅金属-半导体-金属二极管的电流-电压特性的漂移可以通过空穴-电子复合产生电子捕获中心的机制来解释。一阶模型包括热电子移动到阳极激发空穴以及电子与价带尾部捕获的空穴复合，与测量的漂移、器件厚度、电流密度、时间和通过器件的电荷之间的依赖性具有良好的定量一致性。
It is shown that the drift in the current–voltage characteristics of silicon‐rich amorphous silicon nitride metal–semiconductor–metal diodes can be explained by a mechanism whereby electron trapping centers are created via hole–electron recombination. A first order model which includes excitation of holes by hot electrons moving into the anode and recombination of electrons with holes trapped in the valence band tail is in good quantitative agreement with the measured dependencies between drift, device thickness, current density, time, and charge passed through the device.