Thermal stability of tunnel junctions with additional oxidation at the surface of the bottom electrode.
Thermal stability of tunnel junctions with additional oxidation at the surface of the bottom electrode.
复制标题
底部电极表面额外氧化的隧道结的热稳定性。
DOI：
10.3379/jmsjmag.27.303
复制
发表时间：
2003
影响因子：
--
通讯作者：
T. Miyazaki
中科院分区：
文献类型：
--
作者：
S. Iura;H. Kubota;Y. Ando;T. Miyazaki
测量了底部铁磁层表面附加氧化的铁磁隧道结的隧道磁电阻（TMR）比与退火温度的关系。在375°C左右的高温下，TMR比急剧增加。这种倾向与对自由基氧化连接的依赖非常相似。热稳定性的增强可能是由于底部铁磁层表面存在氧气。
The annealing temperature dependence of the tunnel magnetoresistance (TMR) ratio for ferromagnetic tunnel junctions with additional oxidation at the surface of the bottom ferromagnetic layer was measured. A drastic increase of TMR ratio was achieved at high temperature around 375°C. Such a tendency was very similar to the dependence for radical oxidized junctions. The enhancement of the thermal stability would be due to the existence of oxigen on the surface of the bottom ferromagnetic layer.