STRAIN-ENERGY DISTRIBUTION AND ELECTRONIC STRUCTURE OF INAS PYRAMIDAL QUANTUM DOTS WITH UNCOVERED SURFACES : TIGHT-BINDING ANALYSIS
STRAIN-ENERGY DISTRIBUTION AND ELECTRONIC STRUCTURE OF INAS PYRAMIDAL QUANTUM DOTS WITH UNCOVERED SURFACES : TIGHT-BINDING ANALYSIS
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具有裸露表面的 INAS 金字塔量子点的应变能分布和电子结构：紧束缚分析
DOI：
10.1103/physrevb.57.13016
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发表时间：
1998
影响因子：
3.7
通讯作者：
Y. Arakawa
中科院分区：
文献类型：
--
作者：
Toshio Saitô;J. Schulman;Y. Arakawa
从理论上分析了InAs锥形量子点表面未覆盖时的应变能分布和电子结构。量子点中的应变，模拟自组装量子点的GaAs上，使用基廷势计算。内部原子的应变能在最低层最大，而靠近金字塔顶部的几层几乎没有应变。用sp 3s * 紧束缚方法计算了内部态和表面态的态密度。内部态的密度显示出大的能隙;对于161-1222个原子的QD，为2.71-1.74 eV。同时，我们还发现了差距中的表面态。
The strain energy distribution and electronic structure of InAs pyramidal quantum dots (QD’s) with uncovered surfaces have been analyzed theoretically. The strain in the QD’s, which simulate self-assembled QD’s on GaAs, is calculated using the Keating potential. The strain energy per inside atom is largest at the lowest layer, while the several layers near the pyramid top have practically no strain. Using the sp 3 s* tight-binding method, we calculate the densities of states for the inside states and the surface states. The density of the inside states shows a large energy gap; 2.71–1.74 eV for 161–1222-atom QD’s. At the same time, we find the surface states in the gap.