Electric-field control of magnetic properties for alpha-Fe2O3/Al2O3 films
Electric-field control of magnetic properties for alpha-Fe2O3/Al2O3 films
复制标题
α-Fe2O3/Al2O3 薄膜磁性能的电场控制
DOI：
10.1088/1361-6463/aac2b2
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Hu Jifan
中科院分区：
文献类型：
--
作者：
Cheng Bin;Qin Hongwei;Liu Liang;Xie Jihao;Zhou Guangjun;Chen Lubin;Hu Jifan
α- fe2o3 / al2o3薄膜在室温下表现出弱铁磁性。在500℃时，薄层的饱和磁化强度大于厚层的饱和磁化强度，说明室温下的弱铁磁性不仅来自于本征倾斜磁性结构，还来自于α- fe2o3 / al2o3界面的影响，如Al向α- fe2o3膜内扩散的影响。室温下施加于α- fe2o3 / al2o3薄膜上的垂直电场可调节薄膜的磁性能（饱和磁化强度、剩磁强度、矫顽力和饱和磁化强度）。正电场能增强α- fe2o3 /Al 2o3薄膜的磁性，负电场能降低α- fe2o3 /Al 2o3薄膜的磁性。电场引起的变化可能与铝离子的迁移作用有关。饱和磁化强度随电场变化曲线的阶跃可以反映这些复杂的过程。在较高温度下沉积的薄膜磁化强度更容易被电场改变。这项研究可能会激发更深入的研究，并为未来的磁电子器件提供一种替代方法。
α-Fe 2 O 3/Al 2 O 3 films can exhibit weak ferromagnetism at room temperature. The saturation magnetization of the thinner film is larger than that of the thick one deposited at the same temperature of 500 C, which implies that the weak ferromagnetism at room temperature comes not only from the intrinsic canted magnetic structure, but also from the effects of interface between α-Fe 2 O 3/Al 2 O 3, such as the effect of Al diffusion into α-Fe 2 O 3 film. Perpendicular electric field upon α-Fe 2 O 3/Al 2 O 3 film at room temperature could adjust the magnetic properties (saturation magnetization, magnetic remanence, coercivity and saturation magnetizing field). The positive electric field can enhance the magnetism of α-Fe 2 O 3/Al 2 O 3 thin film, while negative electric field can reduce it. The change induced by electric field may be connected with the migration effects of Al 3+ ions. The steps of curve for saturation magnetization versus the electric field may reflect these complicated processes. The magnetization of the film deposited at a higher temperature can be changed by electric field more easily. This study may inspire more in-depth research and lead to an alternative approach to future magneto-electronic devices.