Atomic layer deposition of SnSex thin films using Sn(N(CH3)2)4 and Se(Si(CH3)3)2 with NH3 co-injection.
Atomic layer deposition of SnSex thin films using Sn(N(CH3)2)4 and Se(Si(CH3)3)2 with NH3 co-injection.
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DOI：
10.1039/d1dt03487a
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发表时间：
2021-12
影响因子：
4
通讯作者：
J. Jeon;C. Yoo;Woohyun Kim;Wonho Choi;Byong-Seo Park;Yoon Kyeung Lee;C. Hwang
中科院分区：
文献类型：
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作者：
J. Jeon;C. Yoo;Woohyun Kim;Wonho Choi;Byong-Seo Park;Yoon Kyeung Lee;C. Hwang
本文介绍了在NH_3共注入条件下，用Sn(N(CH_3)_2)_4和Se(Si(CH_3)_3)_2原子层沉积Se_3薄膜。NH3和Se(Si(CH3)3)2的共注入对于薄膜的生长至关重要，以将前驱体转化为更具活性的形式。这种特殊的ALD工艺最关键的特点是，即使在给定的前体注入条件下，也可以通过改变生长温度来改变化学成分(Sn/Se比)。沉积薄膜的成分和形貌随工艺温度的不同而不同。在150℃以下，SnSe2薄膜以非晶态沉积，保持了其前驱体的氧化态。在170℃以上，由于SnSe的结晶和Se的脱附，薄膜的成分转变为1：1的化学计量比。为了改善SnSe的高温ALD表面粗糙度，设计了一种包含低温种子层的两步生长序列。
This study introduces the atomic layer deposition (ALD) of tin selenide thin films using Sn(N(CH3)2)4 and Se(Si(CH3)3)2 with NH3 co-injection. The co-injection of NH3 with Se(Si(CH3)3)2 is essential for film growth to convert the precursor into a more reactive form. The most critical feature of this specific ALD process is that the chemical composition (Sn/Se ratio) could be varied by changing the growth temperature, even for the given precursor injection conditions. The composition and morphology of the deposited films varied depending on the process temperature. Below 150 °C, a uniform SnSe2 thin film was deposited in an amorphous phase, maintaining the oxidation states of its precursors. Above 170 °C, the composition of the film changed to 1 : 1 stoichiometry due to the crystallization of SnSe and desorption of Se. A two-step growth sequence involving a low-temperature seed layer was devised for the high-temperature ALD of SnSe to improve surface roughness.