Impact of intraband relaxation on the performance of a quantum-dot laser
Impact of intraband relaxation on the performance of a quantum-dot laser
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DOI：
10.1109/jstqe.2003.819494
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发表时间：
2003-09
影响因子：
4.9
通讯作者：
A. Markus;J. X. Chen;O. Gauthier-Lafaye;J. Provost;C. Paranthoën;A. Fiore
中科院分区：
文献类型：
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作者：
A. Markus;J. X. Chen;O. Gauthier-Lafaye;J. Provost;C. Paranthoën;A. Fiore
本文介绍了1.3-/spl μ m量子点激光器的测量结果，揭示了一些有趣的效应。1)在高偏置下，出现第二条激光线，对应激发态跃迁。2)线宽增强因子在阈值以上显著增加。3)第二激光线出现时，调制性能下降。一个全面的数值模型被开发来解释这种行为。我们将其归因于阈值以上的增益不完全箝位。这是由有限的带内弛豫时间和有限的态密度共同造成的。
Measurements on 1.3-/spl mu/m quantum-dot lasers are presented that reveal a number of interesting effects. 1) At high bias, a second lasing line appears, corresponding to the excited state transition. 2) The linewidth enhancement factor increases dramatically above threshold. 3) The modulation performance is degraded when the second lasing line appears. A comprehensive numerical model is developed to explain this behavior. We attribute it to incomplete gain clamping above threshold. This is caused by a combination of the finite intraband relaxation time and the limited density of states.