RF circuit design aspects of spiral inductors on silicon
RF circuit design aspects of spiral inductors on silicon
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DOI：
10.1109/4.735544
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发表时间：
1998-12-01
影响因子：
5.4
通讯作者：
Jenkins, KA
中科院分区：
文献类型：
--
作者：
Burghartz, JN;Edelstein, DC;Jenkins, KA
讨论了硅衬底螺旋电感的设计与优化、集成电路中相关的布局问题以及电感q对射频（RF）模块性能的影响。电感为0.5-100 nW， Q值高达40的集成螺旋电感在大规模集成硅技术中是可行的，电路设计方面，如最小电感面积，电感之间的串扰，以及衬底接触对电感特性的影响都得到了解决，重要的RF构建模块，如带通滤波器，低噪声放大器，和压控振荡器被证明从改进的电感器q中受益匪浅。
The design and optimization of spiral inductors on silicon substrates, the related layout issues in integrated circuits, and the effect of the inductor-Q on the performance of radiofrequency (RF) building blocks are discussed. Integrated spiral inductors with inductances of 0.5-100 nW and Q's up to 40 are shown to be feasible in very-large-scale-integration silicon technology, Circuit design aspects, such as a minimum inductor area, the cross talk between inductors, and the effect of a substrate contact on the inductor characteristics are addressed, Important RF building blocks, such as a bandpass filter, low-noise amplifier, and voltage-controlled oscillator are shown to benefit substantially from an improved inductor-Q.