Transient enhanced diffusion of aluminum in SiC during high temperature ion implantation
Transient enhanced diffusion of aluminum in SiC during high temperature ion implantation
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DOI：
10.1063/1.371651
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发表时间：
1999-11
影响因子：
3.2
通讯作者：
I. Usov;A. Suvorova;V. Sokolov;Y. Kudryavtsev;A. Suvorov
中科院分区：
文献类型：
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作者：
I. Usov;A. Suvorova;V. Sokolov;Y. Kudryavtsev;A. Suvorov
6H-SiC 晶圆在室温 (RT) 和 1700 °C 高温 (HT) 下注入 50 keVAl+ 离子，剂量从 1.4×1014 到 1.4×1016 cm−2。与在室温下注入的样品相比，在高温下注入的样品显示出相当大的铝再分布。 Al 的扩散被证明是一种瞬态效应，在近表面区域和本体中具有不同的衰减时间。晶体结构的研究表明，在近表面区域，随着 HT 注入 Al 剂量的增加，位错环尺寸增大，并且形成 Al 沉淀物。注入层结构的变化可能对Al的重新分布产生强烈影响。观察到的重新分布可以通过高温注入期间的解离扩散机制来解释。
6H–SiC wafers were implanted at room temperature (RT) and at 1700 °C high temperature (HT) with 50 keVAl+ ions to doses from 1.4×1014 to 1.4×1016 cm−2. Compared to samples implanted at RT, the samples implanted at high temperature display considerable aluminum redistribution. The diffusion of Al is shown to be a transient effect with different decay times in the near-surface region and in the bulk. Investigation of the crystalline structure indicated that in the near-surface region dislocation loops grow in size and Al precipitates are formed as the dose of Al implanted at HT is increased. Changes in the structure of the implanted layer may have a strong effect on the redistribution of Al. The observed redistribution can be explained by a dissociative diffusion mechanism during the high-temperature implantation.