Structural and optical properties of heteroepitaxial beta Ga2O3 films grown on MgO (100) substrates
Structural and optical properties of heteroepitaxial beta Ga2O3 films grown on MgO (100) substrates
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DOI：
10.1016/j.tsf.2012.02.027
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发表时间：
2012-04-30
期刊：
影响因子：
2.1
通讯作者：
Lv, Yu
中科院分区：
文献类型：
--
作者：
Kong, Lingyi;Ma, Jin;Lv, Yu
采用金属有机物气相外延法在MgO（100）衬底上制备了氧化镓（Ga 2 O3）薄膜。结构分析表明，在550-700 ℃下沉积的薄膜是外延的β-Ga_2 O_3薄膜，其面外关系为β-Ga_2 O_3（100）平行于MgO（100）。在650 ℃下沉积的薄膜显示出最好的结晶度，并通过高分辨率透射电子显微镜研究了薄膜的微观结构。提出了生长机制的理论模型，并给出了面内外延关系为β-Ga 2 O3 [001]平行于MgO< 011 >。一个四畴结构内的外延膜被澄清。在650 ℃下沉积的β-Ga 2 O3膜在紫外和可见光范围内显示出95.9%的绝对平均透射率，其具有4.87 eV的光学带隙。(C)2012爱思唯尔有限公司版权所有。
Gallium oxide (Ga2O3) films were deposited on MgO (100) substrates by metalorganic vapor phase epitaxy. Structure analyses showed that the films deposited at 550-700 degrees C were epitaxial beta-Ga2O3 films with an out of plane relationship of beta-Ga2O3(100)parallel to MgO(100). The film deposited at 650 degrees C showed the best crystallinity and the microstructure of the film was investigated by high resolution transmission electron microscopy. A theoretical model of the growth mechanism was proposed and the in-plane epitaxial relationship was given to be beta-Ga2O3[001]parallel to MgO < 011 >. A four-domain structure inside the epitaxial film was clarified. The beta-Ga2O3 film deposited at 650 degrees C showed an absolute average transmittance of 95.9% in the ultraviolet and visible range, which had an optical band gap of 4.87 eV. (C) 2012 Elsevier B.V. All rights reserved.