Designing non-noble/semiconductor Bi/BiVO4 photoelectrode for the enhanced photoelectrochemical performance
Designing non-noble/semiconductor Bi/BiVO4 photoelectrode for the enhanced photoelectrochemical performance
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DOI：
10.1016/j.cej.2017.05.171
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发表时间：
2017-10-15
影响因子：
15.1
通讯作者：
Bi, Yingpu
中科院分区：
文献类型：
--
作者：
Wang, Qizhao;He, Jijuan;Bi, Yingpu
采用电化学沉积、热处理和光辅助还原相结合的方法，在室温下在FTO玻璃上制备了Bi/BiVO 4光电极。采用X射线衍射（XRD）、扫描电镜（SEM）和紫外-可见漫反射光谱（DRS）对样品进行了表征。结果表明，在光助还原沉积过程中，金属Bi颗粒在多孔BiVO 4薄膜上沉积良好，其可见光吸收边比单独BiVO 4薄膜的可见光吸收边大大展宽。通过线性扫描伏安法（LSV）、电流-时间（I-t）和入射光-电流效率（IPCE）进一步验证了Bi/BiVO 4 -60的光电化学性能。结果表明，Bi/BiVO 4 PEC体系的可见光响应范围变宽，对正电荷的反作用增强，这都是由于BiVO 4向Bi的电子转移，从而有效地促进了光生载流子的分离和转移，提高了PEC的水分解性能。(C)2017爱思唯尔B. V.保留所有权利。
Bi/BiVO4 photoelectrode was prepared on FTO glass by the combination of electrochemical deposition, heating treatment and photo-assisted reduction method at room temperature. All of the samples were characterized by X-ray diffraction spectrum (XRD), scanning electron microscope (SEM) and UV-vis diffuse reflectance spectrum (DRS), respectively. The results indicated that metallic Bi particles were well deposited on porous BiVO4 film during the deposition process of photo-assisted reduction, resulting in a greatly broadened visible light absorption edge than that of BiVO4 alone. The optimized photoelectrochemical (PEC) performance of Bi/BiVO4-60 was further verified by linear scan voltammetry (LSV), current-time (I-t) and incident photon-to-current efficiency (IPCE), respectively. It was conjectured the broadened visible light response range of Bi/BiVO4 PEC system and the increased counteraction against positive charge both were caused by the electron transferred from BiVO4 to Bi, and thus effectively facilitated the separation and transfer of photo-generated carriers and thus promote the PEC water splitting performance. (C) 2017 Elsevier B.V. All rights reserved.