Characteristics and mechanism of conduction/set process in TiN/ZnO/Pt resistance switching random-access memories
Characteristics and mechanism of conduction/set process in TiN/ZnO/Pt resistance switching random-access memories
复制标题
TiN/ZnO/Pt电阻切换随机存取存储器的导通/置位过程特性及机制
DOI：
10.1063/1.2945278
复制
发表时间：
2008-06-09
影响因子：
4
通讯作者：
Yu, Bin
中科院分区：
文献类型：
--
作者：
Xu, Nuo;Liu, Lifeng;Yu, Bin
研究了TiN/ZnO/Pt基电阻随机存储器件的导通/置位特性和机理，该器件具有稳定的纳秒双极开关特性。存储器行为对单元面积、工作温度和频率的依赖性表明，低电阻状态下的导电机制是由于电子通过细丝路径跳跃。我们还确定，设置过程基本上相当于一个软介质击穿与低电场应力下的空间电荷的迁移所造成的极化效应。氧空位和非晶格氧离子的产生/恢复在电阻切换中起关键作用。(C)2008年美国物理学会。
The characteristics and mechanism of conduction/set process in TiN/ZnO/Pt-based resistance random access memory devices with stable and reproducible nanosecond bipolar switching behavior were studied. The dependencies of memory behavior on cell area, operating temperature, and frequency indicate that the conduction mechanism in low-resistance states is due to electrons hopping through filament paths. We also identify that the set process is essentially equivalent to a soft dielectric breakdown associated with a polarization effect caused by the migration of space charges under a low electric field stress. The generation/recovery of oxygen vacancies and nonlattice oxygen ions play a critical role in resistance switching. (C) 2008 American Institute of Physics.