Epitaxial growth of wafer-scale transition metal dichalcogenide monolayers by metalorganic chemical vapor deposition
Epitaxial growth of wafer-scale transition metal dichalcogenide monolayers by metalorganic chemical vapor deposition
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DOI：
10.1109/edtm53872.2022.9797981
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发表时间：
2022-03
期刊：
影响因子：
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通讯作者：
N. Trainor; Chen-Chen-Chen;Haoyue Zhu;Thomas V. Mc Knight;T. Choudhury;J. Redwing
中科院分区：
文献类型：
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作者：
N. Trainor; Chen-Chen-Chen;Haoyue Zhu;Thomas V. Mc Knight;T. Choudhury;J. Redwing
晶圆级半导体TMDs单层（MoS 2，WS 2，WSe 2）的外延生长的c-平面蓝宝石上的金属有机化学气相沉积（MOCVD）的证明和由此产生的薄膜的结构和光学性能进行比较，以阐明基于金属和硫属物种的趋势。与WSe 2相比，硫基TMD在蓝宝石上表现出改善的外延、更少的缺陷和增加的光致发光强度，这归因于更小的有效晶格失配和改善的稳定性。
The epitaxial growth of wafer-scale semiconducting TMDs monolayers (MoS2, WS2, WSe2) on c-plane sapphire by metalorganic chemical vapor deposition (MOCVD) is demonstrated and the resulting structural and optical properties of the films are compared to elucidate trends based on metal and chalcogen species. The sulfur based TMDs exhibit improved epitaxy, fewer defects and increased photoluminescence intensity on sapphire compared to WSe2 which is attributed to a smaller effective lattice mismatch and improved stability.