Enhanced light extraction efficiency in flip-chip GaN light-emitting diodes with diffuse Ag reflector on nanotextured indium-tin oxide
Enhanced light extraction efficiency in flip-chip GaN light-emitting diodes with diffuse Ag reflector on nanotextured indium-tin oxide
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DOI：
10.1063/1.2953174
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发表时间：
2008-07-14
影响因子：
4
通讯作者：
Kim, Yong Chun
中科院分区：
文献类型：
--
作者：
Kim, Ja-Yeon;Kwon, Min-Ki;Kim, Yong Chun
我们研究了一种具有漫反射的倒装芯片发光二极管(FCLED)，它是通过在纳米结构的铟锡氧化物(ITO)层上沉积一层银膜而制成的。采用漫射银反射层的FCLED比平面ITO层上镜面银反射层的FCLED具有更好的附着力和更高的反射率。与镜面银反射器相比，漫射银反射器的FCLED输出功率在300 mA时提高了161.3%。(C)2008年美国物理研究所。
We investigated a flip-chip light emitting diode (FCLED) with a diffuse reflector fabricated by depositing a Ag film on a nanotextured indium-tin oxide (ITO) layer. The FCLED with a diffuse Ag reflector showed remarkably good adhesion and high reflectance than that with a specular Ag reflector deposited on the planar ITO layer. The optical output power of FCLED with the diffuse Ag reflector was enhanced by 161.3% at 300 mA compared to that with the specular Ag reflector. (C) 2008 American Institute of Physics.