Low Driving Voltage and High Mobility Ambipolar Field-Effect Transistors with PbS Colloidal Nanocrystals
Low Driving Voltage and High Mobility Ambipolar Field-Effect Transistors with PbS Colloidal Nanocrystals
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DOI：
10.1002/adma.201205041
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发表时间：
2013-08-21
影响因子：
29.4
通讯作者：
Loi, Maria Antonietta
中科院分区：
文献类型：
--
作者：
Bisri, Satria Zulkarnaen;Piliego, Claudia;Loi, Maria Antonietta
PbS胶体纳米晶具有尺寸可调的特性，是一种很有前途的光电子器件材料。然而，人们对它们的电荷输运机制仍知之甚少。通过配体选择、双极晶体管结构优化和电化学门控使用的组合，实现了高载流子迁移率。出色的器件特性打开了研究PbS纳米碳的本征输运性质的可能性。
PbS colloidal nanocrystals (NCs) are promising materials for optoelectronic devices, due to their size-tunable properties. However, there is still minimal understanding of their charge transport mechanism. Through a combination of ligand selections, ambipolar transistor structure optimization, and electrochemical gating usage, high carrier mobility is achieved. The outstanding device characteristics open possibility to investigate the intrinsic transport properties of PbS NCs.