High-Performance Low-Voltage-Driven Phototransistors through CsPbBr3-2D Crystal van der Waals Heterojunctions
High-Performance Low-Voltage-Driven Phototransistors through CsPbBr3-2D Crystal van der Waals Heterojunctions
复制标题
通过 CsPbBr3 的高性能低电压驱动光电晶体管 - 2D 晶体范德华异质结
DOI：
10.1002/adom.201800152
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发表时间：
2018-08-20
影响因子：
9
通讯作者：
Zeng, Haibo
中科院分区：
文献类型：
--
作者：
Huo, Chengxue;Liu, Xuhai;Zeng, Haibo
将卤化物钙钛矿和2D材料结合形成异质结是设计高性能光电晶体管的潜在优秀策略。然而，标准的钙钛矿/2D材料异质结没有完全实现，因为活性材料中的任一种通常直接桥接晶体管平台中的相对金属电极。这里，基于高质量的货车德瓦尔斯生长的CsPbBr 3和MoS 2制造光电晶体管，其中CsPbBr 3和MoS 2仅在晶体管沟道内重叠。基于这种标准CsPbBr 3/MoS 2异质结的光电晶体管在漏源电压小至0.5 V时表现出优异的光检测能力和场效应特性。光电晶体管的上升和下降时间分别为2.5和1.8 ms。在442 nm激光照射下，空穴迁移率为0.28 cm（2）V ~（-1）s ~（-1）。所有的测量都是在室温下在环境空气中进行的，表明CsPbBr 3/MoS 2异质结具有优异的鲁棒性。这项工作提供了一种新的策略，通过使用低电压驱动，空气稳定的钙钛矿/2D材料异质结来最大限度地减小器件尺寸。
Combining halide perovskites and 2D materials to form heterojunctions is a potential excellent strategy to design high-performance phototransistors. However, a standard perovskite/2D material heterojunction is not fully realized, because either of the active material usually directly bridges across the opposite metal electrodes in the transistor platform. Here, phototransistors are fabricated based on high-quality van der Waals grown CsPbBr3 and MoS2, in which CsPbBr3 and MoS2 are overlapped only within the transistor channel. The phototransistors based on this standard CsPbBr3/MoS2 heterojunction exhibit excellent optical detection ability and field-effect characteristics at a drain-source voltage as small as 0.5 V. The rise and fall times of the phototransistor are 2.5 and 1.8 ms, respectively. The hole mobility is calculated to be 0.08 cm(2) V-1 s(-1) in darkness, and 0.28 cm(2) V-1 s(-1) under the 442 nm laser illumination. All of the measurements are conducted at room temperature in ambient air, indicating the excellent robustness of the CsPbBr3/MoS2 heterojunction. This work provides a new strategy to minimize the device size by using low-voltage-driven, air-stable perovskite/2D material heterojunctions.