High field magnetoresistance in CeOs4Sb12
High field magnetoresistance in CeOs4Sb12
复制标题
CeOs4Sb12 中的高场磁阻
DOI：
10.1016/j.jmmm.2003.12.711
复制
发表时间：
2004
影响因子：
2.7
通讯作者：
H. Sato
中科院分区：
文献类型：
--
作者：
H. Sugawara;M. Kobayashi;E. Kuramochi;S. Osaki;S. Saha;T. Namiki;Y. Aoki;H. Sato
我们使用高质量单晶测量了 CeOs4Sb12 的磁阻 (MR)。我们在 MR 中发现了明显的异常现象，表明在低于 ∼2 K 的低温下存在有序相。人们发现在低温下施加磁场对电阻率的巨大抑制表明电子状态从绝缘态转变为金属态。
We have measured the magnetoresistance (MR) in CeOs4Sb12using a high quality single crystal. We have found distinct anomalies in MR indicating the existence of an ordered phase at low temperatures below ∼2 K . The huge suppression of resistivity by applying the magnetic field has been found at low temperatures indicating the electronic state changes from insulating to metallic.