Room-temperature copper etching based on a plasma–copper reaction
Room-temperature copper etching based on a plasma–copper reaction
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基于等离子体-铜反应的室温铜蚀刻
DOI：
10.1063/1.1347388
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发表时间：
2001
影响因子：
4
通讯作者：
Sangheon Lee
中科院分区：
文献类型：
--
作者：
Y. Kuo;Sangheon Lee
描述了一种有前景的室温铜蚀刻工艺。使用平行板反应器在温和的条件下可以将铜薄膜高速蚀刻成垂直轮廓。该工艺成功的关键因素是等离子体-铜反应产生的铜膨胀现象。反应产物已被鉴定为结晶氯化铜。研究了影响反应过程和最终铜分布的关键参数。除了等离子体相化学之外，离子轰击在此过程中也发挥着关键作用。尽管这封信中报告的结果是基于氯等离子体，但使用其他卤素气体也可以获得类似的结果。该工艺对于先进微电子、存储、显示和光学设备的制造具有潜在的重要意义。
A promising room-temperature copper etching process is described. The copper thin film can be etched into a vertical profile at a high rate using a parallel-plate reactor under mild conditions. The key factor for the success of this process is a copper swelling phenomenon from the plasma–copper reaction. The reaction product has been identified as a crystalline copper chloride. Key parameters that influence the reaction process and the final copper profile have been studied. In addition to the plasma phase chemistry, ion bombardment plays a critical role in the process. Although results reported in this letter are based on the chlorine plasma, similar results can be obtained with other halogen gases. This process is potentially important to the fabrication of advanced microelectronic, storage, display, and optical devices.