Ni-Fe/Cu多層膜における界面へのイオン照射
Ni-Fe/Cu多層膜における界面へのイオン照射
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Ni-Fe/Cu多层膜界面的离子辐照
DOI：
10.3379/jmsjmag.21.565
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发表时间：
1997
影响因子：
--
通讯作者：
正彦 直江
中科院分区：
文献类型：
--
作者：
泰敬 宮本;渡辺 健太郎;茂樹 中川;正彦 直江
采用双离子束溅射法制备了具有巨磁电阻效应的Fe/[Ni_（81）Fe_（19）/Cu]_（30）多层膜，该方法通过离子轰击来控制多层膜的晶粒取向和界面结构。在本研究中，在Ni-Fe/Cu多层膜中，只有少数界面处的单层膜暴露于离子轰击，这导致局部界面混合和扩散。当轰击离子源的加速电压为160 V时，通过离子轰击沉积的膜获得了大的MR比、低的饱和电阻率和相对尖锐的界面结构。减小残余应力似乎对获得良好的磁阻特性是有效的。
Fe/[Ni81Fe19/Cu]30 multilayers with giant magnetoresistance (GMR) were deposited by the dual ion beam sputtering method, which allows the crystallite orientations and interfacial structures to be controlled by the ion bombardment. In this study, only a few monolayers at interfaces in Ni-Fe/Cu multilayers were exposed to ion bombardment, which causes local interfacial mixing and diffusion. A large MR ratio, low saturation resistivity, and relatively sharp interfacial structure were attained for films deposited by ion bombardment when the acceleration valtage of the bombarding ion source was 160 V. Reducing the residual stress seems to be effective for attaining good magnetoresistive characteristics.