Photoluminescence of carbon in situ doped GaN grown by halide vapor phase epitaxy
Photoluminescence of carbon in situ doped GaN grown by halide vapor phase epitaxy
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DOI：
10.1063/1.121144
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发表时间：
1998-07
影响因子：
4
通讯作者：
Rong Zhang;T. Kuech
中科院分区：
文献类型：
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作者：
Rong Zhang;T. Kuech
在卤化物气相外延过程中原位掺碳，并研究了掺碳GaN薄膜的光致发光特性。已经发现，将碳并入GaN中产生约2.2eV的显著黄色发光。黄色谱带的峰位线性蓝移，谱带的强度随测量温度单调下降，线宽发生系统性变化。这些结果表明，多个施主-受主复合通道参与了黄色发光。
Carbon was in situ doped into GaN during halide vapor phase epitaxy and photoluminescence properties of the C-doped GaN film were investigated. It has been found that incorporation of carbon into GaN produces a significant yellow luminescence around 2.2 eV. The peak position of the yellow band blueshifts linearly and the intensity of that band monotonically decreases with measurement temperature, with systematic changes in the linewidth. These results suggest that multiple donor–acceptor recombination channels are involved in the yellow luminescence.