Nonlinear Effects Excitonic Emission from High Quality Homoepitaxial Diamond Films
Nonlinear Effects Excitonic Emission from High Quality Homoepitaxial Diamond Films
复制标题
高质量同质外延金刚石薄膜的非线性效应激子发射
DOI：
10.1143/jjap.39.l835
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发表时间：
2000
影响因子：
1.5
通讯作者：
H. Okushi
中科院分区：
文献类型：
--
作者：
H. Watanabe;H. Okushi
首次在室温下在同质外延金刚石薄膜的阴极发光 (CL) 光谱中观察到自由激子发射 (235 nm) 强度与电子束电流之间的非线性关系。对于在使用 CH4 的微波等离子体辅助化学气相沉积 (CVD) 中使用低浓度 CH4 生长的高质量金刚石薄膜，激子发射强度在低激发区域中随电子束电流线性增加，但在高激发区域中超线性增加，高于室温下约 30 µA 的阈值。这些结果强烈表明，高质量金刚石薄膜的自由激子发射能够用作发光二极管和激光二极管的深紫外（235 nm）光源。
A nonlinear relationship between the intensity of the free-exciton emission (235 nm) and the electron-beam current has been observed in cathodoluminescence (CL) spectra from homoepitaxial diamond films for the first time at room temperature. For high quality diamond films grown using a low concentration of CH4 in microwave plasma assisted chemical vapor deposition (CVD) using CH4, the excitonic emission intensity increases linearly with the electron bean current in the low excitation region but increases super-linearly in the high excitation region above a threshold value of about 30 µA at room temperature. These results strongly suggest that the free-exciton emission from high quality diamond films is able to apply as a light souse for deep-ultraviolet (235 nm) of light emitting diodes and laser diodes.