Transient photodepopulation measurements of electron trap distributions in thin SiO2 films on silicon
Transient photodepopulation measurements of electron trap distributions in thin SiO2 films on silicon
复制标题
硅上 SiO2 薄膜中电子陷阱分布的瞬态光消聚测量
DOI：
10.1063/1.1662264
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发表时间：
1973
影响因子：
3.2
通讯作者：
J. H. Thomas
中科院分区：
文献类型：
--
作者：
J. H. Thomas
与电子捕获中心的光学减少相关的瞬态光电流已被研究为硅晶片上生长的非晶硅薄膜中光子能量的函数。总结了应用该技术确定二氧化硅薄膜中不均匀陷阱态分布的情况。报道了在二氧化硅导带边缘以下 1.9 eV 和 2.5 eV 处观察到的电子捕获分布，其密度为 1014/cm3。液氮温度下的测量表明，除了深陷阱分布之外，还存在类似浓度水平的浅陷阱状态。
Transient photocurrents associated with optical depopulation of electron trapping centers have been studied as a function of photon energy in thin amorphous silical films grown on silicon wafers. A summary is given of the application of this technique to determine inhomogeneous trap state distributions in silica films. Electron trapping distributions observed at 1.9 eV and 2.5 eV below the conduction band edge of the silica and having densities of 1014/cm3 are reported. Measurements at liquid‐nitrogen temperature indicate the presence of shallow trapping states of similar concentration levels in addition to the deep trap distributions.