Effect of compensation and of metallic impurities on the electrical properties of Cz-grown solar grade silicon
Effect of compensation and of metallic impurities on the electrical properties of Cz-grown solar grade silicon
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DOI：
10.1063/1.3021300
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发表时间：
2008-11
影响因子：
3.2
通讯作者：
J. Libal;Sara Novaglia;M. Acciarri;S. Binetti;R. Petres;J. Arumughan;R. Kopecek;A. Prokopenko
中科院分区：
文献类型：
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作者：
J. Libal;Sara Novaglia;M. Acciarri;S. Binetti;R. Petres;J. Arumughan;R. Kopecek;A. Prokopenko
在这项工作中，我们提出了一种p型直拉法生长的硅锭的研究，它是用10%的太阳能级硅(SOG-Si)生长的。由于SOG-Si中含有较高浓度的磷等杂质，因此，补偿掺杂和其他杂质都会影响该晶体的电学性能。对生长的材料中少数载流子寿命的测量显示出很低的值(4-8μS)。室温下的霍尔迁移率对应于铸锭上部(首先凝固)的直拉硅的正常值，并在铸锭底部显著降低。偏析导致杂质向铸锭下部聚集，磷的增加比硼的增加更强烈，后者导致高补偿水平(即，增加的电阻率)。先验地，这两种效应都可能是导致下部电学性质退化的原因。
In this work we present a study of a p-type Czochralski-grown Si ingot which was grown using 10% solar grade silicon (SoG-Si). As the SoG-Si contains a relatively high concentration of impurities including phosphorus, the electrical properties of the as-grown wafers from this ingot are affected by both the compensating dopants and other impurities. Measurements of the minority charge carrier lifetime in the as-grown material reveal very low values (4–8μs). The Hall mobilities at room temperature correspond to normal values for Czochralski silicon in the upper part of the ingot (which solidifies first) and decrease significantly toward the bottom of the ingot. Segregation leads to an accumulation of impurities toward the lower parts of the ingot as well as to a stronger increase in phosphorus than of boron, the latter of which results in a high compensation level (i.e., an increasing resistivity). A priori, both effects could be responsible for the degradation of the electrical properties in the lower part...