Magnetic Domain Wall Engineering in a Nanoscale Permalloy Junction
Magnetic Domain Wall Engineering in a Nanoscale Permalloy Junction
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DOI：
10.1063/1.4985662
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发表时间：
2016-05
期刊：
影响因子：
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通讯作者：
Junlin Wang;Xichao Zhang;Xianyang Lu;Jason Zhang;Hua Ling;Jing Wu;Yan Zhou;Yongbing Xu
中科院分区：
文献类型：
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作者：
Junlin Wang;Xichao Zhang;Xianyang Lu;Jason Zhang;Hua Ling;Jing Wu;Yan Zhou;Yongbing Xu
纳米级磁性结提供了一种有用的方法来充当磁阻随机存取存储器（MRAM）的构建块，其中关键问题之一是控制磁域配置。在这里，我们通过微磁模拟研究了不同厚度的坡莫合金（Fe20Ni80）纳米级磁结的磁畴结构和磁开关。研究发现，根据器件的厚度，结和线臂之间可以形成90度和45度畴壁。磁开关场表现出明显的厚度依赖性，根据结尺寸，宽峰值从 7 nm 到 22 nm 变化，并且大的磁开关场有利于 MRAM 操作的稳定性。
Nanoscale magnetic junction provides a useful approach to act as the building block for magnetoresistive random access memories (MRAM), where one of the key issues is to control the magnetic domain configuration. Here, we study the domain structure and the magnetic switching in the Permalloy (Fe20Ni80) nanoscale magnetic junctions with different thicknesses by using micromagnetic simulations. It is found that both the 90-degree and 45-degree domain walls can be formed between the junctions and the wire arms depending on the thickness of the device. The magnetic switching fields show distinct thickness dependencies with a broad peak varying from 7 nm to 22 nm depending on the junction sizes, and the large magnetic switching fields favor the stability of the MRAM operation.