Strain-induced crossover of the metal-insulator transition in perovskite manganites
Strain-induced crossover of the metal-insulator transition in perovskite manganites
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DOI：
10.1103/physrevb.71.060403
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发表时间：
2005-02-01
影响因子：
3.7
通讯作者：
Miyano, K
中科院分区：
文献类型：
--
作者：
Ogimoto, Y;Nakamura, M;Miyano, K
应变在确定钙钛矿锰氧化物的电子态中的重要作用被清楚地证明在（Nd 1-xPrx）（0.5）Sr0.5MnO3的电荷轨道有序外延薄膜中的一阶相变的各向异性和衬底依赖性交叉的形式。（110）取向外延生长技术的应用允许在一级转变处的大的各向异性晶格变形所必需的结构柔性。该技术使我们能够微调的Jahn-Teller扭曲操纵的金属绝缘体转变的薄膜，第一步强关联电子器件。
The essential role of strain in determining the electronic states of perovskite manganites is clearly demonstrated in the form of anisotropic and substrate-dependent crossover of a first-order phase transition in charge-orbital ordered epitaxial thin films of (Nd1-xPrx)(0.5)Sr0.5MnO3. An application of (110)-oriented epitaxial growth technique allows the structural flexibility indispensable for the large anisotropic lattice deformation at the first-order transition. The technique enables us to fine-tune the Jahn-Teller distortion for manipulating the metal-insulator transition in thin films, a first step toward the strongly correlated electron devices.