Recombination dynamics of localized excitons in AlxGa1-xN (0.37<x<0.81) ternary alloys
Recombination dynamics of localized excitons in AlxGa1-xN (0.37<x<0.81) ternary alloys
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AlxGa1-xN (0.37<x<0.81) 三元合金中局域激子的复合动力学
DOI：
10.1002/pssc.201000899
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
K. Hiramatsu
中科院分区：
文献类型：
--
作者：
H. Murotani;R. Kittaka;S. Kurai;Y.Yamada;H. Miyake;K. Hiramatsu
利用时间分辨光致发光（PL）谱研究了AlxGa 1-xN（0.37<x<0.81）三元合金外延层中局域激子的激发动力学。分析了PL寿命的发射能量依赖性，以估计局域化程度（E0）和局域激子的辐射复合寿命（τrad）。在x =0.37 ~ 0.61范围内，E0随Al含量的增加而增大，随Al含量的进一步增加而减小。当x =0.37至0.61时，τ rad值从903 ps略微增加到958 ps，然后在Al成分高于0.61时迅速下降（τrad=484 ps（x =0.81））。快速下降很好地解释了考虑激子的振子强度的增加，增加铝组合物除了激子本地化的效果减少。（© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
Recombination dynamics of localized excitons in AlxGa1‐xN ternary alloy epitaxial layers (0.37<x<0.81) has been studied by means of time‐resolved photoluminescence (PL) spectroscopy. An emission energy dependence of the PL lifetime was analyzed to estimate the degree of localization (E0) and the radiative recombination lifetime of localized excitons (τrad). TheE0increased with increasing Al composition fromx=0.37 to 0.61, and decreased with further increasing Al composition. The value ofτradincreased slightly from 903 to 958 ps forx=0.37 to 0.61, and then the rapid decrease occurred at the Al compositions above 0.61 (τrad=484 ps forx=0.81). The rapid decrease was well explained by considering the increase in the oscillator strength of excitons with increasing Al composition in addition to the decrease in the effect of exciton localization. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)