Progress in the Efficiency of Wide-Gap Cu(In1-xGax)Se2 Solar Cells Using CIGSe Layers Grown in Water Vapor
Progress in the Efficiency of Wide-Gap Cu(In1-xGax)Se2 Solar Cells Using CIGSe Layers Grown in Water Vapor
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DOI：
10.1143/jjap.44.l679
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发表时间：
2005-05
影响因子：
1.5
通讯作者：
S. Ishizuka;K. Sakurai;A. Yamada;H. Shibata;K. Matsubara;M. Yonemura;S. Nakamura;H. Nakanishi;T. Kojima;S. Niki
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文献类型：
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作者：
S. Ishizuka;K. Sakurai;A. Yamada;H. Shibata;K. Matsubara;M. Yonemura;S. Nakamura;H. Nakanishi;T. Kojima;S. Niki
利用在水蒸气中生长的CIGSe层，研究了x值在0.5左右的宽禁带铜(In_(1-x)Gax)Se_2(CIGSe)太阳电池的性能。虽然在水蒸气存在下沉积的CIGSe薄膜的电学性质发生了变化，如空穴载流子密度的增加和p型电导率的增强，但没有观察到明显的形貌和生长方向的变化。使用在水蒸气中生长的CIGSe层改善了CIGSe太阳电池的开路电压和电流密度。从1.3 eV-CIGSe(x∼0.48)层制备了18.1%效率的电池，开路电压为0.744 V，电流密度为32.4 mA/cm~2，填充因子为0.752。
Progress in the performance of wide-gap Cu(In1-xGax)Se2 (CIGSe) solar cells for x values around 0.5 has been demonstrated using CIGSe layers grown in the presence of water vapor. While CIGSe thin films deposited in the presence of water vapor showed variations in electrical properties such as increases in hole carrier density and a consequent enhancement of p-type conductivity, no significant changes in the morphology and growth orientation were observed. Both the open circuit voltages and current densities of the CIGSe solar cells were improved using CIGSe layers grown in water vapor. An 18.1%-efficient cell with an open circuit voltage of 0.744 V, a current density of 32.4 mA/cm2 and a fill factor of 0.752 was fabricated from a 1.3 eV-CIGSe (x ∼0.48) layer.