A p-GaN-Gated Hybrid Anode Lateral Diode with a Thicker AlGaN Barrier Layer
A p-GaN-Gated Hybrid Anode Lateral Diode with a Thicker AlGaN Barrier Layer
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具有较厚 AlGaN 势垒层的 p-GaN 栅极混合阳极横向二极管
DOI：
10.1002/pssa.201900781
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
Hui Yang
中科院分区：
文献类型：
--
作者：
Shuai Su;Yaozong Zhong;Yu Zhou;Hongwei Gao;Xiaoning Zhan;Xin Chen;Xiaolu Guo;Qian Sun;Zihui Zhang;Wengang Bi;Hui Yang
通过凹陷结构上的 p-GaN 再生长，成功制造了具有 45 nm 厚 AlGaN 势垒的 p-GaN 栅极混合阳极横向二极管。该二极管具有凹进式 p-GaN 栅极欧姆混合阳极，并且 p-GaN 结构可以很好地控制从阳极流向阴极的电流。利用这种再生 p-GaN 结构和厚 AlGaN 势垒的架构，可以同时降低二极管的正向导通电压 (Von) 和导通电阻 (Ron)。 Von和Rone均表现出优异的均匀性，平均值分别为0.71±0.02V和10.6±0.27Ωmm。此外，即使没有场板结构，也能实现高击穿电压（约488 V）。该二极管的制造工艺似乎与已成功商业化的带有p-GaN栅极的常关高电子迁移率晶体管（HEMT）的制造工艺完全兼容，从而实现了更方便的单片集成。
A p‐GaN‐gated hybrid anode lateral diode with a 45 nm‐thick AlGaN barrier is successfully fabricated through p‐GaN regrowth over recessed structure. This diode features a recessed p‐GaN‐gated ohmic hybrid anode, and the current flow from the anode to the cathode can be well controlled by the p‐GaN structure. With this architecture of regrown p‐GaN structure and thick AlGaN barrier, the forward turn‐on voltage (Von) and on‐resistance (Ron) of the diode can be reduced simultaneously. BothVonandRonexhibit an excellent uniformity with an average value of 0.71 ± 0.02 V and 10.6 ± 0.27 Ω mm, respectively. Also, a high breakdown voltage (≈488 V) is achieved even in the absence of field plate structure. The fabrication process of the diode seems to be fully compatible with that of normally off high‐electron‐mobility transistors (HEMTs) with p‐GaN gate, which is successfully commercialized, enabling more convenient monolithic integration.