COMPARISON OF BINARY AND MULTIVALUED ICS ACCORDING TO VLSI CRITERIA
COMPARISON OF BINARY AND MULTIVALUED ICS ACCORDING TO VLSI CRITERIA
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DOI：
10.1109/2.49
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发表时间：
1988-04-01
期刊：
影响因子：
2.2
通讯作者：
ISRAEL, M
中科院分区：
文献类型：
--
作者：
ETIEMBLE, D;ISRAEL, M
作者从速度、芯片面积和功耗方面比较了用于MOS和双极技术的二值和m值集成电路的性能。它们介绍了m值电路的基本概念和基本类型，使认真比较成为可能。它们涵盖Post代数和m值电路、m值电流模式电路和m值存储单元。
The authors compare the performance of two-valued and m-valued ICs for MOS and bipolar technologies according to speed, chip area, and power dissipation. They present the basic concepts and the basic types of m-valued circuits that make a serious comparison possible. They cover Post algebra and m-valued circuitry, m-valued current-mode circuits, and m-valued memory cells.<>