The Use of Close Spacing in Chemical‐Transport Systems for Growing Epitaxial Layers of Semiconductors
The Use of Close Spacing in Chemical‐Transport Systems for Growing Epitaxial Layers of Semiconductors
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DOI：
10.1149/1.2425614
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发表时间：
1963-11
影响因子：
3.9
通讯作者：
F. Nicoll
中科院分区：
文献类型：
--
作者：
F. Nicoll
讨论已经提出了相反的理论来解释钽的结果。由货车Geel等人提出的理论。(5)考虑了Ta/Ta_2 O_5/电解质三相体系中电子平衡的条件。由两个具有不同功函数的接触所限定的绝缘氧化物必须在平衡时经受电场。通过照明产生的空穴-电子对导致该场的减小以及触点之间的伴随电势差（开路光电压）。Apker和塔夫脱（2）提出了第二种理论，其中，由于薄膜生长的条件，氧化物被认为支持钽离子的浓度梯度，这实际上需要在薄膜中形成pn结。已知pn结表现出光伏效应。短路光电流的光谱灵敏度和氧化物的吸收光谱之间的相似性值得注意。氧化物内的光吸收似乎是主要步骤，因此不需要考虑可能的光电效应。观察到的光电压衰减与
DiscussionOpposing theories have been offered to account for the results obtained with tantalum. A theory proposed by Van Geel et al.(5) considers the conditions of electron equilibrium in the three phase system, Ta/Ta205/electrolyte. An insulating oxide bounded by two contacts having different work functions must be subjected to an electric field at equilibrium. The creation of hole-electron pairs by illumination causes a reduction of this field and a concomitant potential difference (open-circuit photovoltage) between the contacts. A second theory has been proposed by Apker and Taft (2) in which, as a result of the conditions of film growth, the oxide is considered to support a concentration gradient of tantalum ions which in effect requires a pn junction in the film. A pn junction is known to exhibit photovoltaic effects. The similarity between the spectral sensitivity of the short-circuit photocurrent and the absorption spectrum of the oxide is to be noted. Light absorption within the oxide appears to be the primary step, and thus possible photoelectric effects need not be considered. The observed decay of photovoltage with