LiF as an n-dopant in tris(8-hydroxyquinoline) aluminum thin films
LiF as an n-dopant in tris(8-hydroxyquinoline) aluminum thin films
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DOI：
10.1002/adma.200701657
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发表时间：
2008-04-21
影响因子：
29.4
通讯作者：
So, Franky
中科院分区：
文献类型：
--
作者：
Choudhury, Kaushik Roy;Yoon, Jong-hyuk;So, Franky
通过共蒸发实现Alq（3）与LiF的容易的非碱性n掺杂。最佳掺杂不仅导致增强的器件电流和电导率，而且还改变载流子注入和传输的本质。使用该方案，在不使用低功函数阴极的情况下实现了有效的电子注入。OLED中的掺杂传输层（见图）导致电荷载流子的平衡注入和传输，并导致优异的器件性能。
Facile non-alkaline n-doping of Alq(3) with LiF is achieved by co-evaporation. Optimal doping not only leads to enhanced device currents and conductivity, but also changes the very nature of carrier injection and transport. Using this scheme, efficient electron injection is achieved without using low-work-function cathodes. A doped transport layer (see figure) in OLEDs leads to balanced injection and transport of charge carriers and results in excellent device performance.