A novel scallop free TSV etching method in magnetic neutral loop discharge plasma
A novel scallop free TSV etching method in magnetic neutral loop discharge plasma
复制标题
磁中性环放电等离子体中新型无扇贝 TSV 刻蚀方法
DOI：
10.1109/ectc.2012.6248923
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
K. Suu
中科院分区：
文献类型：
--
作者：
Y. Morikawa;T. Murayama;T. Sakuishi;M. Yoshii;K. Suu
近年来，高性能LSI的“2.5D硅中介层”和“全3D堆叠”技术备受关注，因为该技术可以通过TSV（Through Silicon Via）电连接堆叠LSI来解决互连问题。 2.5D和3D Si集成相对于传统的二维器件具有封装密度高、线长小、高速运行、低功耗、并行处理可行性高等巨大优势。
In recent years, "2.5D silicon interposers" and "Full 3D stacked" technology for high-performance LSI has attracted much attention since this technology can solve interconnection problems using TSV (Through Silicon Via) to electrically connect stacked LSI. 2.5D and 3D Si integration has great advantages over conventional two-dimensional devices such as high packaging density, small wire length, high-speed operation, low power consumption, and high feasibility for parallel processing.