Monte Carlo study of diffusion phenomena in III - V modulation doped heterostructures

Monte Carlo study of diffusion phenomena in III - V modulation doped heterostructures
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III - V 调制掺杂异质结构中扩散现象的蒙特卡罗研究

DOI：
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发表时间：
1997
期刊：
影响因子：
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通讯作者：
R. Fauquembergue
R. Fauquembergue
中科院分区：
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文献类型：
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作者：
A. Sleiman;J. Thobel;P. Bourel;F. Dessenne;R. Fauquembergue

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用蒙特卡罗方法研究了III-V异质结中二维电子气(TDEG)的扩散系数。该模型考虑了所有山谷的量子化和非抛物性。扩散系数由沿界面漂移的窄脉冲载流子的扩散决定。我们考虑了两种异质结构：AlGaAs/InGaAs/AlGaAs和与InP相匹配的AlInAs/InGaAs/AlInAs晶格。对77K时的扩散系数场特性进行了广泛的研究。已经观察到与爱因斯坦关系有很大偏离，即使在低场下也是如此。纵向扩散系数与场有很强的依赖关系，对于周围的场可以达到很高的值。它的演化可以用散射率的行为来解释，特别是对杂质和声子的散射。
This paper presents a Monte Carlo study of diffusion coefficients in two-dimensional electron gas (TDEG) in III - V heterostructures. The model accounts for the quantization of all valleys and for non-parabolicity. The diffusion coefficients are determined by the spreading of a narrow pulse of carriers drifting along the interface. Two kinds of heterostructures have been considered: AlGaAs/InGaAs/AlGaAs and the AlInAs/InGaAs/AlInAs lattice matched on InP. The diffusion coefficient - field characteristics at 77 K temperature have been extensively studied. Large deviations from the Einstein relation have been observed, even at low-fields. The longitudinal diffusion coefficient is shown to be strongly field dependent and may reach high values for fields around . Its evolution is explained by the behaviour of scattering rates, especially for impurity and phonon scattering.