Giant Piezoelectricity on Si for Hyperactive MEMS
Giant Piezoelectricity on Si for Hyperactive MEMS
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DOI：
10.1126/science.1207186
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发表时间：
2011-11-18
期刊：
影响因子：
56.9
通讯作者：
Eom, C. B.
中科院分区：
文献类型：
--
作者：
Baek, S. H.;Park, J.;Eom, C. B.
集成了有源压电层的微电子机械系统(MEMS)提供集成的驱动、传感和转换。这种有源MEMS的广泛应用长期以来一直受到无法集成具有巨大压电响应的材料的限制，例如Pb1/3Nb2/3)O-3-PbTiO3(PMN-PT)。我们利用具有优良压电系数(e(31，f)=-27+/-3库仑/平方米)的(001)钛酸锶外延模板层和压电能量收集系统的品质因数，在邻近的(001)硅片上合成了高质量的PMN-PT外延薄膜。我们已经将这些异质结构集成到微悬臂梁中，由于薄膜的压电性可以与块状PMN-PT单晶相媲美，因此微悬臂梁的驱动电压极低。这些外延异质结构在超声医学成像、微流体控制、机械传感和能量采集等方面表现出非常大的机电耦合。
Microelectromechanical systems (MEMS) incorporating active piezoelectric layers offer integrated actuation, sensing, and transduction. The broad implementation of such active MEMS has long been constrained by the inability to integrate materials with giant piezoelectric response, such as Pb(Mg1/3Nb2/3)O-3-PbTiO3 (PMN-PT). We synthesized high-quality PMN-PT epitaxial thin films on vicinal (001) Si wafers with the use of an epitaxial (001) SrTiO3 template layer with superior piezoelectric coefficients (e(31,f) = -27 +/- 3 coulombs per square meter) and figures of merit for piezoelectric energy-harvesting systems. We have incorporated these heterostructures into microcantilevers that are actuated with extremely low drive voltage due to thin-film piezoelectric properties that rival bulk PMN-PT single crystals. These epitaxial heterostructures exhibit very large electromechanical coupling for ultrasound medical imaging, microfluidic control, mechanical sensing, and energy harvesting.