Phase change dynamics and 2-dimensional 4-bit memory in Ge2Sb2Te5 via telecom-band encoding
Phase change dynamics and 2-dimensional 4-bit memory in Ge2Sb2Te5 via telecom-band encoding
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发表时间：
2019-10
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通讯作者：
Gary A. Sevison;Shiva Farzinazar;J. Burrow;Christopher Perez;H. Kwon;Jaeho Lee;M. Asheghi;K. Goodson;A. Sarangan;J. Hendrickson;I. Agha
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作者：
Gary A. Sevison;Shiva Farzinazar;J. Burrow;Christopher Perez;H. Kwon;Jaeho Lee;M. Asheghi;K. Goodson;A. Sarangan;J. Hendrickson;I. Agha
随着现代计算不断突破冯·诺依曼瓶颈（限制了数据传输和计算的最终速度），需要新的计算方法来绕过这个问题并保持计算机的发展向前发展，例如带有光学协处理器的混合计算、全光学计算或光子神经形态计算。在任何这些协议中，我们都需要光学存储器：多级/累加器存储器或计算存储器。在这里，我们提出并演示了一种使用 Ge2Sb2Te5 (GST) 相变材料的 2 维 4 位全光学非易失性存储器，并通过 1550 nm 激光进行编码。使用电信波段激光器，由于 GST 在该波长范围内的低损耗特性，我们能够更深入地接触材料，因此与之前的演示相比，增加了光学写入/读取级别的数量，同时保持在可接受的读/写能量范围内。我们通过基于有限元和成核理论的严格数值模拟验证了我们的设计和实验结果，并成功使用直接十六进制编码写入和读取字符串。
As modern computing gets continuously pushed up against the von Neumann Bottleneck -- limiting the ultimate speeds for data transfer and computation -- new computing methods are needed in order to bypass this issue and keep our computer's evolution moving forward, such as hybrid computing with an optical co-processor, all-optical computing, or photonic neuromorphic computing. In any of these protocols, we require an optical memory: either a multilevel/accumulator memory, or a computational memory. Here, we propose and demonstrate a 2-dimensional 4-bit fully optical non-volatile memory using Ge2Sb2Te5 (GST) phase change materials, with encoding via a 1550 nm laser. Using the telecom-band laser, we are able to reach deeper into the material due to the low-loss nature of GST at this wavelength range, hence increasing the number of optical write/read levels compared to previous demonstrations, while simultaneously staying within acceptable read/write energies. We verify our design and experimental results via rigorous numerical simulations based on finite element and nucleation theory, and we successfully write and read a string of characters using direct hexadecimal encoding.