Mobility Enhancement in Uniaxially Strained (110) Oriented Ultra-Thin Body Single- and Double-Gate MOSFETs with SOI Thickness of Less Than 4 nm
Mobility Enhancement in Uniaxially Strained (110) Oriented Ultra-Thin Body Single- and Double-Gate MOSFETs with SOI Thickness of Less Than 4 nm
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DOI：
10.1109/iedm.2007.4419046
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发表时间：
2007-12
期刊：
影响因子：
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通讯作者：
K. Shimizu;T. Hiramoto
中科院分区：
文献类型：
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作者：
K. Shimizu;T. Hiramoto
系统地研究了单极（SG）和双极（DG）超薄体（UTB） SOI mosfet在单轴拉伸应力下的迁移率。本文首次在实验中证明了应力增强UTB nmosfet和pmosfet的迁移率。UTB nmosfet的增强比理论预测的要大。在DG - UTB nmosfet和pmosfet中，应力增强了迁移率。这种增强可能不仅源于子带能量的移动，还源于有效质量的变化。
Mobility in single-gate (SG) and double-gate (DG) ultra-thin body (UTB) SOI MOSFETs under uniaxial tensile stress has been systematically examined. Mobility enhancement in both UTB nMOSFETs and pMOSFETs by stress is experimentally demonstrated for the first time. The enhancement in UTB nMOSFETs is larger than the prediction by theory. The mobility enhancement by stress in DG UTB nMOSFETs and pMOSFETs is also observed. The enhancement may originate from not only the subband energy shift but effective mass change.